CdZnTe | Scintillation Crystal

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CdZnTe scintillation crystal — MCT-matched substrate, resistivity over 10^6 ohm-cm, IR transmission 60%+.

Description

CdZnTe Scintillation Crystal is a substrate material. Its lattice constant closely matches HgCdTe (MCT), and it stays transparent to the infrared wavelengths the MCT layer detects. The material is cadmium zinc telluride.

CdZnTe Scintillation Crystal specifications

Material: CdZnTe. Type: p-type. Sizes: 14×14×1.3 mm and 10×10×1 mm. Crystal faces: (111) and (211). Orientation accuracy: ≤0.3°. Resistivity: ρ > 10⁶ Ω·cm. IR transmission: ≥60%. X-ray DCRC FWHM: ≤30 arcsec. Average etch pit density: 1×10⁴/cm² to 4×10⁴/cm². Surface roughness: Ra ≤ 5 nm. 60%+ IR transmission keeps optical losses low. Low etch-pit density means fewer defects. 5 nm roughness supports high-quality epitaxy.

CdZnTe Scintillation Crystal and MCT

The lattice match to HgCdTe is important. MCT layers grow with fewer defects. Transparency to the detected IR wavelengths keeps sensitivity high. High resistivity isolates pixels electrically. Detector uniformity improves across the wafer. Growers tune the zinc fraction for the target bandgap.

Typical applications

Homeland security. Industrial process control. Positioning and guidance. Infrared focal-plane arrays rely on quality substrates. For the finished detector, see our CZT Detector.

Request a quote for CdZnTe Scintillation Crystal with your size and orientation requirements for a fast response. Specify the crystal face for your process. Tell us the resistivity grade for your device. Specify EPD grade for critical layers.

Technical Specifications

Material

CdZnTe

Type

p-type

Size

14×14×1.3,10×10×1 mm3

Index of Crystal Face

(111), (211)

Orientation and Accuracy

Orientation Accuracy ≤0.3°

Resistivity

ρ>106 Ω·cm

IR Transmission %

≥60%

X-ray DCRC FWHM

≤30 rad·s

Average Etch Pit Density

1×104/cm2 ,4×104/cm2 (EPD)

Surfaces Roughness

Ra≤5 nm

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