Description

V3:YAG Q-Switch Crystal is YAG doped with V3+ in the tetrahedral position. It is a material for passive Q-switching. Q-switching and mode-locking has been obtained with YAG(Nd), KGW(Nd), and YVO4(Nd) under flash-lamp and laser diode pumping. Passive means no driver electronics are needed. It is a saturable absorber for the 1 µm band. The technique is Q-switching.

V3:YAG Q-Switch Crystal absorption

The absorption band between 1.0 and 1.5 µm is attributed to the 3A2 → 3T2 transition of the V3+ ion in the tetrahedral position of the garnet lattice. YAG(V) has worked as an efficient Q-switch for lasers operating in the 1.0 to 1.5 µm region. 1064 nm and 1342 nm lines sit inside the band. The V3+ concentration is controlled by growth and annealing conditions. The 1.0-1.5 µm band covers the main Nd lines. Growth control tunes the modulation depth.

V3:YAG Q-Switch Crystal advantages

Good thermal conductivity. High damage threshold. Chemically stable. A high damage threshold suits high-energy pulses. Chemical stability means no special storage. Thermal conductivity suits high repetition rates.

Typical applications

Passive Q-switch at 1342 nm and 1064 nm. Diode-pumped solid-state lasers. Compact DPSS modules use passive Q-switches. Marking lasers use passive Q-switches for simplicity. Passive Q-switching keeps systems compact. For an electro-optic alternative, see our LN MgOLN Q-Switch Crystal.

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